Informatics Publishing Limited

V. Balavignesh ¹, P. Anandan ²

Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN

Abstract

The aim of this work is to investigate the nanometer-gate In0.7Ga0.3As/InAs/In0.7Ga0.3 As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250°C, the device exhibited a high g_m value at V_d , the current-gain cutoff frequency f_T was increased from 390 to 494 GHz, and the gate-delay time was decreased at supply voltage of 0.6 V. This is the highest f_T achieved for nm-gate-length HEMT devices. These superior performances are attributed to the reduction of distance between gate and channel and the reduction of parasitic gate capacitances during the gate-sinking process. Moreover, such superior performances were achieved through a very simple and straightforward fabrication process with optimal epistructure of the device.

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V. Arun Kumar ¹, P. Anandan ²

Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN

Abstract

The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the TCAD simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass m*, the InSb HEMTs still show the higher current drivability and the higher fT than the InAs HEMTs from the lower Vds. However, the severe impact ionization occurs from the lower Vds owing to the smaller impact ionization threshold energy, Eth, although the compressive strain increases it. This restricts the InSb HEMTs within the low Vds applications.

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P. Anandan ¹, R. S. Sabeenian ²

Affiliations
1 Department of Electronics and Communication Engineering, Sengunthar Engineering College, Tiruchengode-637 205, Tamilnadu, IN
2 Department of Electronics and Communication Engineering, Sona College of Technology, Salem-636 005 Tamilnadu, IN

Abstract

Image processing holds a very important role in various application fields such as medical, education, surveillance etc. Images are very important documents nowadays; to work with them in some applications they need to be compressed, more or less depending on the purpose of the application. Many different image compression techniques currently exist for the compression of different types of images. Image compression is fundamental to the efficient and cost-effective use of digital imaging technology and applications. An investigation is done on the various types of image compression techniques that exist. This paper deals with study of different available image compression techniques with their performance results.

Keywords

Image Compression, Curvelet Transform, Contourlet Transform, Ridgelet Transform, Fractal Transform.

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S. Suganya ¹, P. Anandan ²

Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Tiruvannamalai, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN

Abstract

The AlGaN/GaN based HEMTs are the most promising devices for high power and high frequency applications, due to wide band- gap material (3.4 eV of GaN), high density of two-dimensional electron gas (2DEG) in the buried channel, low intrinsic carrier density, and high saturation velocity. From this novel device structure by introducing a source field-plated in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances. The 2D break down analysis is performed using Sentaurus TCAD simulator. The effects of gate to drain distance (Lgd), source field plate length (Lfp) and passivation layer thickness(tp) on break down voltage (BV) is analyzed. The simulations are done using the hydro dynamic (HD) model, which is calibrated/validated with the previously published experimental results. The breakdown voltage is observed to increase with increase in Lf p and tp. Very high breakdown voltage is obtained by optimizing the Lf p to 3 mm and tp to 200 nm at a fixed gate to drain distance of 3.4 mm. The results show a great potential application of the ultra-thin HfO2 source field plated AlGaN/GaN MOS HEMT to deliver high currents and power densities in high power microwave Technologies.

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Anil Kumar Meher ¹, P. Anandan ¹, Arindam Mukhopadhyay ¹

Affiliations
1 Bioanalytical Laboratories, Lotus Clinical Research Academy Pvt. Ltd., 582, KCA Enclave, Koramangala 8th Block, Bangalore – 560 095, IN

Abstract

A rapid and sensitive method for quantification of the antihypertensive drug, isradipine in human plasma using LCMS/MS has been developed. Protein was precipitated from the plasma by 20% trichloroacetic acid. It was then made alkaline with 1M sodium hydroxide. Isradipine and the internal standard (IS), Nimodipine, were extracted by a simple liquid -liquid extraction method using extraction solvent mixture (n-Hexane: t-butyl methyl ether-70:30, v/v). The extract was then separated by a reverse phase HPLC on a XTerra MSC18 column (100mm x 3.0 mm, 5μm) using solvent mixture 42:58, v/v ( Mobile phase 1: 0.1%, v/v, Formic Acid; Mobile phase 2: Acetonitrile: Methanol- 75:25, v/v). Flow rate was 0.5 ml/min without splitter and the column oven temperature was 35°C. The analytes were then detected by monitoring the transitions m/z 372.1 → m/z 312.0 for isradipine and 419.0 → 343.0 for nimodipine using API 3000 LCMS/MS system (Applied Biosystems) with Turbo Ion Spray interface. A good linear standard curve was obtained within the range of 0.051ng/ml - 20.448ng/ml (r > 0.9973). The lower limit of quantitation (LLOQ) was 0.051 ng/ml. The overall accuracy and precision were 94.28% and 6.19%, respectively. No significant degradation for isradipine in human plasma was observed at room temperature (7h) or when subjected to freeze thaw procedures (3 cycles). No significant metabolic compounds were found to interfere with the analysis. The results of method validation offer the acceptable performance for the specificity, selectivity, sensitivity, linearity, accuracy, precision and stability. This method can be applied for quantitation of isradipine in dosed human plasma samples.

Keywords

Isradipine, Nimodipine, LCMS/MS, Validation, Human Plasma.

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